Nemcsics, Á. : rechercher sur Z-Library

Ákos Nemcsics, Imre Mojzes, László Dobos

Année:

2005

Langue:

english

Fichier:

PDF, 146 KB

english, 2005

Investigation of morphology and fractal behaviour on compound semiconductor surface after electrochemical layer removal

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 217 KB

english, 1999

The coloroid color system

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 776 KB

english, 1980

Color space of the coloroid color system

Journal:

Nemcsics, Akos, Urmos, Antal, Toth, Lajos

Année:

1987

Langue:

english

Fichier:

PDF, 801 KB

english, 1987

Ga metal nanoparticle-GaAs quantum molecule complexes for Terahertz generation

Bietti, Sergio, Basso Basset, Francesco, Scarpellini, David, Fedorov, Alexey, Ballabio, Andrea, Esposito, Luca, Elborg, Martin, Kuroda, Takashi, Nemcsics, Akos, Toth, Lajos, Manzoni, Cristian, Vozzi,

Journal:

Nanotechnology

Année:

2018

Langue:

english

Fichier:

PDF, 2.88 MB

english, 2018

[IEEE 2018 7th International Symposium on Next Generation Electronics (ISNE) - Taipei, Taiwan (2018.5.7-2018.5.9)] 2018 7th International Symposium on Next Generation Electronics (ISNE) - Droplet epitaxy and its possibilities in nano-electronics

Année:

2018

Langue:

english

Fichier:

PDF, 602 KB

english, 2018

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Ákos Nemcsics, Lajos Tóth, László Dobos, Andrea Stemmann

Journal:

Ákos Nemcsics, Andrea Stemmann, Jenő Takács

Année:

2011

Langue:

english

Fichier:

PDF, 708 KB

english, 2011

To the understanding of the formation of the III–V based droplet epitxial nanorings

Journal:

Journal of Nanoscience and Nanotechnology

Année:

2012

Langue:

english

Fichier:

PDF, 449 KB

english, 2012

Regimes of GaAs quantum dot self-assembly by droplet epitaxy

Heyn, Ch., Stemmann, A., Schramm, A., Welsch, H., Hansen, W., Nemcsics, Á.

Journal:

Physical Review B

Année:

2007

Langue:

english

Fichier:

PDF, 249 KB

english, 2007

Faceting during GaAs quantum dot self-assembly by droplet epitaxy

Heyn, Ch., Stemmann, A., Schramm, A., Welsch, H., Hansen, W., Nemcsics, Á.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 512 KB

english, 2007

Formation of Ge Nanocrystals in SiO2 by Electron Beam Evaporation

Basa, P., Molnár, G., Dobos, L., Pécz, B., Tóth, L., Tóth, A. L., Koós, A. A., Dózsa, L., Nemcsics, Á., Horváth, Zs. J.

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 3.33 MB

english, 2008

Nanostructure Growth Supported by In Situ RHEED Evaluation

Kucsera, Péter, Sándor, Tamás, Tényi, Gusztáv Varga, Csutorás, Márton, Bátori, Gergely, Kupás-Deák, Béla, Réti, István, Ürmös, Antal, Nemcsics, Ákos

Journal:

Materials Science Forum

Année:

2017

Langue:

english

Fichier:

PDF, 779 KB

english, 2017

Some aspects to the understanding of the droplet epitaxial nano-hole formation

Nemcsics, Ákos

Journal:

Journal of Crystal Growth

Année:

2017

Langue:

english

Fichier:

PDF, 698 KB

english, 2017

Selective Electrochemical Profiling of Threading Dislocations in Mismatched InGaAs/GaAs Heteroepitaxial Systems

Á. Nemcsics, F. Riesz, L. Dobos

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 268 KB

english, 1999

Contribution to the Impedance Analysis of GaAs–Electrolyte Junctions

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 302 KB

english, 1999

Carrier Profiling of a Heterojunction Bipolar Transistor and p–i–n Photodiode Structures by Electrochemical C–V Technique

R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz

Journal:

Année:

1999

Langue:

english

Fichier:

PDF, 136 KB

english, 1999

Makyoh Topography Study of the Curvature and Surface Morphology of Mismatched InGaAs/GaAs Heterostructures

Á. Nemcsics, F. Riesz, J. Szabó, Z.E. Horváth, S. Gurbán

Journal:

Crystal Research and Technology

Année:

2000

Langue:

english

Fichier:

PDF, 243 KB

english, 2000

Influence of Lattice Mismatch and Growth Rate on the Decay of RHEED Oscillation in the Case of InGaAs/GaAs Growth

Á. Nemcsics, F. Riesz

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 158 KB

english, 2001

Experimental determination of laws of color harmony. Part 1: Harmony content of different scales with similar hue

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 631 KB

english, 2007

Experimental determination of laws of color harmony. Part 2: Harmony content of different monochrome color pairs

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 310 KB

english, 2008

Experimental determination of laws of color harmony. Part 3: Harmony content of different hue pairs

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 838 KB

english, 2009

Experimental determination of the laws of color harmony. Part 4: Color preference and the color harmony content

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 760 KB

english, 2009

Experimental determination of laws of color harmony. Part 5: The harmony content of the various hue triads

Journal:

K. Somogyi, M. Németh-Sallay, Á. Nemcsics

Année:

2011

Langue:

english

Fichier:

PDF, 4.11 MB

english, 2011

Determination of the Thickness of Chemically Removed Thin Layers on GaAs VPE Structures

Journal:

Crystal Research and Technology

Année:

1991

Langue:

english

Fichier:

PDF, 379 KB

english, 1991

Observation of dislocations in GaAs by (photo)-electrochemical method

A Nemcsics, L Petrás, K Somogyi

Journal:

Vacuum

Année:

1990

Langue:

english

Fichier:

PDF, 788 KB

english, 1990

The electronic structure of InxGa1-xAs (001) d(2×4) surfaces

R. Schnurpfeil, K. Reshöft, A. Müller, Á. Nemcsics, R. Manzke, M. Skibowski

Journal:

Journal of Electron Spectroscopy and Related Phenomena

Année:

1994

Langue:

english

Fichier:

PDF, 722 KB

english, 1994

The RHEED tracking of the droplet epitaxial grown quantum dot and ring structures

Á. Nemcsics, Ch. Heyn, A. Stemmann, A. Schramm, H. Welsch, W. Hansen

Journal:

Materials Science and Engineering: B

Année:

2009

Langue:

english

Fichier:

PDF, 421 KB

english, 2009

Novel material for an electrochemical solar cell

Á. Nemcsics, S. Kovács, Z. Lábadi, K.-F. Hesse, M. Czank, P. Turmezei, S. Motrya

Journal:

Solar Energy Materials and Solar Cells

Année:

2005

Langue:

english

Fichier:

PDF, 291 KB

english, 2005

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

A. Csik, M. Serényi, Z. Erdélyi, A. Nemcsics, C. Cserhati, G.A. Langer, D.L. Beke, C. Frigeri, A. Simon

Journal:

Vacuum

Année:

2009

Langue:

english

Fichier:

PDF, 281 KB

english, 2009

Investigation of the surface morphology on epitaxially grown fullerene structures

Á. Nemcsics, Sz. Nagy, I. Mojzes, R. Schwedhelm, S. Woedtke, R. Adelung, L. Kipp

Journal:

Vacuum

Année:

2009

Langue:

english

Fichier:

PDF, 331 KB

english, 2009

The initial phase shift phenomenon of RHEED oscillations

Journal of Crystal Growth

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 180 KB

english, 2000

Correlation between the critical layer thickness and the decaytime constant of RHEED oscillations in strained InxGa1−xAs/GaAs structures

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 162 KB

english, 2000

Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Zs.J Horváth, L Dózsa, Vo Van Tuyen, B Pődör, Á Nemcsics, P Frigeri, E Gombia, R Mosca, S Franchi

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 137 KB

english, 2000

Valuing of the critical layer thickness from the deading time constant of RHEED oscillation in the case of InxGa1−xAs/GaAs heterojunction

Ákos Nemcsics, Miklós Schuszter, László Dobos, Győző Ballai

Journal:

Applied Surface Science

Année:

2002

Langue:

english

Fichier:

PDF, 77 KB

english, 2002

Morphological investigation of the electrochemically etched GaAs (001) surface

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 265 KB

english, 2002

MBE Growth of Strained InxGa1−xAs on GaAs(001)

á. Nemcsics, J. Olde, M. Geyer, R. Schnurpfeil, R. Manzke, M. Skibowski

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 615 KB

english, 1996

Interpretation of the depth-dependent etch pit density in InGaAs/GaAs heterostructures

Á. Nemcsics, F. Riesz

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 141 KB

english, 2003

Modelling of Cd4GeSe6–electrolyte junction for solar cell purposes

P. Turmezei, Á. Nemcsics

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 87 KB

english, 2003

Fabrication of a-SiGe structure by rf sputtering for solar cell purposes

M. Serenyi, J. Betko, Á. Nemcsics, N. Q. Khanh, M. Morvic

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 156 KB

english, 2003

An X-ray diffraction study of the structural properties of thick relaxed (100) InGaAs/GaAs heterostructures

F. Riesz, J. Z. Domagala, Á. Nemcsics

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 452 KB

english, 2005

Photoluminescence studies of GaAs quantum dots and quantum rings

Ákos Nemcsics, János Balázs, Bálint Pődör, János Makai, Andrea Stemmann

Journal:

Instruments and Experimental Techniques

Année:

2011

Langue:

english

Fichier:

PDF, 8.44 MB

english, 2011

Experimental determination of the valence band structure of the InxGa1-x-As(001) surface

á. Nemcsics

Journal:

Inorganic Materials

Année:

2000

Langue:

english

Fichier:

PDF, 674 KB

english, 2000

Study of polish material removal by electrochemical method on different compound semiconductors

á. Nemcsics, L. Dobos, L. David

Journal:

Inorganic Materials

Année:

2000

Langue:

english

Fichier:

PDF, 1.15 MB

english, 2000

Remark to the Intensity Measurement of RHEED

A. Nemcsics, J. Olde, M. Geyer, K. Reshoft

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 111 KB

english, 2005

Composition of the “GaAs” quantum dot, grown by droplet epitaxy

Á. Nemcsics, L. Tóth, L. Dobos, Ch. Heyn, A. Stemmann, A. Schramm, H. Welsch, W. Hansen

Journal:

Superlattices and Microstructures

Année:

2010

Langue:

english

Fichier:

PDF, 889 KB

english, 2010

Explanation of the initial phase change vs. incident angle of the RHEED intensity oscillation